Направленное излучение из квантовых точек GaAs в теле нитевидных нанокристаллов AlGaAs
نویسندگان
چکیده
We present the results on experimental studies of directional radiation from GaAs quantum dots in AlGaAs nanowires grown by molecular beam epitaxy technique silicon surface. It was shown that intensity direction growth is 2 orders magnitude higher than perpendicular direction.
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ژورنال
عنوان ژورنال: Pis?ma v Žurnal tehni?eskoj fiziki
سال: 2021
ISSN: ['1726-7471', '0320-0116']
DOI: https://doi.org/10.21883/pjtf.2021.08.50855.18715